TSMC and TSMC build exotic MRAM-based memories with radically reduced latency, power consumption, and heat.
The data is written into the memory cell through changing the magnetization of the free layer. This layer acts as’storage layer’ in the MRAM bit cells. A current is passed through the heavy-metal layer which creates a spin current, injecting it into the adjacent magnetic layers, changing their orientation and changing their state. By passing a current across the MTJ, data can be read by assessing its magnetoresistance. The SOT-MRAM is a hybrid of STT and SOT MRAM. It differs primarily in the geometry used to inject current during the write process.
SOT-MRAM has a lower standby power, but it still consumes a lot of power when writing. SOT-SRAM is also harder to manufacture and larger than SRAM. SOT-SRAM is a promising technology, but it’s unlikely to replace SRAM anytime soon. SOT MRAM is a good option for applications that require in-memory computing.
来源和详细信息:
https://www.tomshardware.com/pc-components/dram/tsmc-tandem-builds-exotic-new-memory-with-radically-lower-latency-and-power-consumption-mram-based-memory-can-also-conduct-its-own-compute-operations